Influence of Annealing on Crystal Structure and Properties of SrBi2 Ta2 O9 Thin Films Prepared by Pulse Laser Deposition
YANG Ping-xiong, ZHENG Li-rong, WANG Lian-wei, LIN Cheng-lu
State Key Laboratory of Functional Materials for Information, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
Influence of Annealing on Crystal Structure and Properties of SrBi2 Ta2 O9 Thin Films Prepared by Pulse Laser Deposition
YANG Ping-xiong;ZHENG Li-rong;WANG Lian-wei;LIN Cheng-lu
State Key Laboratory of Functional Materials for Information, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
77.80.-e ,
68.35.Fx ,
42.55.Gp
Abstract ： The perovskite-like SrBi2 Ta2 O9 (SBT) thin films have been fabricated on Si/SiO2 /Ti/Pt substrate by pulse laser deposition. The crystallization and ferroelectric property were clearly dependent on the annealing time and temperature. The SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750°C for 90min. Good ferroelectric properties were obtained from the SBT film annealed under this condition; Pr and Ec were 8.4μC/cm2 and 57kV/cm, respectively.
Key words ：
77.80.-e
68.35.Fx
42.55.Gp
出版日期: 1996-12-01
引用本文:
YANG Ping-xiong;ZHENG Li-rong;WANG Lian-wei;LIN Cheng-lu. Influence of Annealing on Crystal Structure and Properties of SrBi2 Ta2 O9 Thin Films Prepared by Pulse Laser Deposition[J]. 中国物理快报, 1996, 13(12): 934-936.
2 Ta2 O9 Thin Films Prepared by Pulse Laser Deposition. Chin. Phys. Lett., 1996, 13(12): 934-936.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I12/934
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1996, Vol. 13 
