Enhanced Stark Shift in GaAs/AlGaAs Step Quantum Well Under an Applied Electric Field
MA Jianwei, CHEN Zhenghao, CUI Dafu, YUAN Zhenyu, YANG Guozhen
Institute of Physics, Academia Sinica, Deijing 100080
Enhanced Stark Shift in GaAs/AlGaAs Step Quantum Well Under an Applied Electric Field
MA Jianwei;CHEN Zhenghao;CUI Dafu;YUAN Zhenyu;YANG Guozhen
Institute of Physics, Academia Sinica, Deijing 100080
关键词 :
73.20.Dx ,
42.65.Hw ,
78.20.Jq
Abstract : Theoretical calculations of the quantum confined Stark shift for the first heavy hole exciton (hhl--el) in step quantum well are given. A significant change in Stark shift is achieved in specially stepped potential shape, which is more than two times larger than the conventional rectangular quantum well. The structure has the advantage of a large change in absorption, which is one of the best candidates for the optical modulators utilizing the quantum confined Stark effect (QCSE) in GaAs/AlGaAs. Relations between QCSE and stepped structure are discussed in the optimization for large Stark shift.
Key words :
73.20.Dx
42.65.Hw
78.20.Jq
出版日期: 1995-02-01
引用本文:
MA Jianwei;CHEN Zhenghao;CUI Dafu;YUAN Zhenyu;YANG Guozhen
. Enhanced Stark Shift in GaAs/AlGaAs Step Quantum Well Under an Applied Electric Field
[J]. 中国物理快报, 1995, 12(2): 102-105.
MA Jianwei, CHEN Zhenghao, CUI Dafu, YUAN Zhenyu, YANG Guozhen
. Enhanced Stark Shift in GaAs/AlGaAs Step Quantum Well Under an Applied Electric Field
. Chin. Phys. Lett., 1995, 12(2): 102-105.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1995/V12/I2/102
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