Effect of VI/II Ratio on Structure and Optoelectrical Properties of Zinc Oxide Thin Films Deposited by Metal-Organic Chemical Vapor Deposition
MA Yan, DU Guo-Tong, YANG Shu-Ren, YANG Tian-Peng, YANG Hong-Jun, YANG Xiao-Tian, ZHAO Bai-Jun, LIU Da-Li
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023
Effect of VI/II Ratio on Structure and Optoelectrical Properties of Zinc Oxide Thin Films Deposited by Metal-Organic Chemical Vapor Deposition
MA Yan;DU Guo-Tong;YANG Shu-Ren;YANG Tian-Peng;YANG Hong-Jun;YANG Xiao-Tian;ZHAO Bai-Jun;LIU Da-Li
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023
关键词 ：
81.05.Dz ,
81.15.Gh ,
78.55.-m ,
73.61.-r
Abstract ： ZnO thin films with the c-axis orientation on the (0001) sapphire substrate were grown by metal-organic chemical vapor deposition. It was demonstrated that the VI/II precursor flow-rate ratio can influence strongly on the structure and opto-electrical properties. With the increasing VI/II ratio of 130:1, the full width at half maximum of (0002) peak in x-ray diffraction is only 0.184°, the near-band-edge emission enhances remarkably and the intensity ratio of the near-band-edge emission to the deep-level emission reaches 237:1 in the photoluminescence spectrum. At the same time, the resistivity and mobility increases to 3.28 x 102 Ω.cm and 25.3cm2 V-1 s-1 . These facts indicates that the quality of the ZnO thin films could be improved by the increase of the VI/II flow rate ratio during the growth.
Key words ：
81.05.Dz
81.15.Gh
78.55.-m
73.61.-r
出版日期: 2003-07-01
:
81.05.Dz
(II-VI semiconductors)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
78.55.-m
(Photoluminescence, properties and materials)
73.61.-r
(Electrical properties of specific thin films)
引用本文:
MA Yan;DU Guo-Tong;YANG Shu-Ren;YANG Tian-Peng;YANG Hong-Jun;YANG Xiao-Tian;ZHAO Bai-Jun;LIU Da-Li. Effect of VI/II Ratio on Structure and Optoelectrical Properties of Zinc Oxide Thin Films Deposited by Metal-Organic Chemical Vapor Deposition[J]. 中国物理快报, 2003, 20(7): 1155-1157.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I7/1155
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