Apparatus for Real-Time Measurement of Stress in Thin Films at
Elevated Temperatures

摘要
图/表
参考文献
相关文章 (15)

全文: PDF (349 KB) HTML (0 KB)
输出: BibTeX | EndNote (RIS)

	服务

	把本文推荐给朋友
	加入我的书架
	加入引用管理器
	E-mail Alert
	RSS
	作者相关文章
	AN Bing
	ZHANG Tong-Jun
	YUAN Chao
	CUI Kun

关键词 ： 81.70.Fy, 68.60.Bs, 68.60.Dv, 42.87.-d

Abstract： As a prerequisite of biaxial zero creep experiments, a novel sensitive apparatus is developed for real-time film-stress measurement during thermal cycles. The optical sensor with a fixed multi-beam emitter and a CCD detector is investigated during an annealing process of Ag/Co multilayer thin film. The monitoring plots of stress as functions of temperature and time demonstrate the capability of this set-up. The typical sensitivity for measuring the wafer curvature radius is 2km.

Key words： 81.70.Fy 68.60.Bs 68.60.Dv 42.87.-d

出版日期: 2003-08-01

:	81.70.Fy	(Nondestructive testing: optical methods)
	68.60.Bs	(Mechanical and acoustical properties)
	68.60.Dv	(Thermal stability; thermal effects)
	42.87.-d	(Optical testing techniques)

引用本文:

AN Bing;ZHANG Tong-Jun;YUAN Chao;CUI Kun. Apparatus for Real-Time Measurement of Stress in Thin Films at Elevated Temperatures[J]. 中国物理快报, 2003, 20(8): 1387-1389.
AN Bing, ZHANG Tong-Jun, YUAN Chao, CUI Kun. Apparatus for Real-Time Measurement of Stress in Thin Films at Elevated Temperatures. Chin. Phys. Lett., 2003, 20(8): 1387-1389.

链接本文:

https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2003/V20/I8/1387