Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy
LI Zhong-Hui, YANG Zhi-Jian, QIN Zhi-Xin, TONG Yu-Zhen, YU Tong-Jun, LU Shu, YANG Hua, ZHANG Guo-Yi
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
Research Center for Wide Band-gap Semiconductor, Peking University, Beijing 100871
Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy
LI Zhong-Hui;YANG Zhi-Jian;QIN Zhi-Xin;TONG Yu-Zhen;YU Tong-Jun;LU Shu;YANG Hua;ZHANG Guo-Yi
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
Research Center for Wide Band-gap Semiconductor, Peking University, Beijing 100871
Abstract： The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW) structure were grown by low-pressure metalorganic vapor phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2 nm with narrow FWHM of 14.3 nm and the forward voltage of 3.6 V at 20 mA injection current at room temperature. With increasing forward current from 10 mA to 50 mA, the red-shift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.
2003, Vol. 20 
