Growth of Co Nanoclusters on Si<suB>3</suB>N<suB>4</suB> Surface Formed on Si(111)

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	LIU Xi
	JIA Jin-Feng
	WANG Jun-Zhong
	XUE Qi-Kun

关键词 ： 81.07.-b, 68.37.Ef, 68.43.Bc, 61.46.+w

Abstract：We have grown high density Co clusters with a narrow-sized distribution on the Si₃N₄(0001)-(8 x 8) surface. In the submonolayer regime, Co clusters tend to keep a certain size (～ 1.45 nm in diameter) irrespective of coverage. With increasing coverage above 0.92 ML, two new clusters with certain but larger sizes are formed. This novel growth behaviour can be explained by the quantum size effect [Phys. Rev. Lett. 90 (2003) 185506]. It is found that the Co cluster size distribution can be improved by post annealing. Even at high temperature (700°C), no reaction of Co with Si₃N₄ is observed, indicating that Si₃N₄(0001)-(8 x 8) is a promising substrate for growth of magnetic nanostructures.

Key words： 81.07.-b 68.37.Ef 68.43.Bc 61.46.+w

出版日期: 2003-10-01

:	81.07.-b	(Nanoscale materials and structures: fabrication and characterization)
	68.37.Ef	(Scanning tunneling microscopy (including chemistry induced with STM))
	68.43.Bc	(Ab initio calculations of adsorbate structure and reactions)
	61.46.+w

引用本文:

LIU Xi;JIA Jin-Feng;WANG Jun-Zhong;XUE Qi-Kun. Growth of Co Nanoclusters on Si₃N₄ Surface Formed on Si(111)[J]. 中国物理快报, 2003, 20(10): 1871-1874.
LIU Xi, JIA Jin-Feng, WANG Jun-Zhong, XUE Qi-Kun. Growth of Co Nanoclusters on Si₃N₄ Surface Formed on Si(111). Chin. Phys. Lett., 2003, 20(10): 1871-1874.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2003/V20/I10/1871