Formation and Decay of Electron-Hole Plasma Clusters in a Direct-Gap Semiconductor CuCl
JIANG Lei1,2, WU Ming-Wei1,2, M. Nagai3, M. Kuwata-Gonokami4
1Structure Research Laboratory, University of Science and Technology of China, Hefei 230026
2Department of Physics, University of Science and Technology of China, Hefei 230026
3Department of Physics, Kyoto University, Kyoto 606-8502, Japan
4Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Formation and Decay of Electron-Hole Plasma Clusters in a Direct-Gap Semiconductor CuCl
1Structure Research Laboratory, University of Science and Technology of China, Hefei 230026
2Department of Physics, University of Science and Technology of China, Hefei 230026
3Department of Physics, Kyoto University, Kyoto 606-8502, Japan
4Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Abstract： The master equation for the cluster-size distribution function is solved numerically to investigate the electron-hole droplet formation claimed to be discovered in the direct-gap CuCl excited by picosecond laser pulses [Nagai et al Phys. Rev. Lett. 86 (2001) 5795; J. Lumin. 100 (2002) 233]. Our result shows that for the excitation in the experiment, the average number of pairs per cluster (ANPC) is only around 5.2, much smaller than that (106 typically for Ge) of the well studied electron-hole droplet in indirect-gap semiconductors such as Ge and Si. These results indicate that what measured in CuCl by Nagai et al. may not come from the EHD formed from exciton gas, instead possibly come from some bubbles of excitons in metallic liquid.
(Collective effects (Bose effects, phase space filling, and excitonic phase transitions))
引用本文:
JIANG Lei;WU Ming-Wei;M. Nagai;M. Kuwata-Gonokami. Formation and Decay of Electron-Hole Plasma Clusters in a Direct-Gap Semiconductor CuCl[J]. 中国物理快报, 2003, 20(10): 1833-1835.
JIANG Lei, WU Ming-Wei, M. Nagai, M. Kuwata-Gonokami. Formation and Decay of Electron-Hole Plasma Clusters in a Direct-Gap Semiconductor CuCl. Chin. Phys. Lett., 2003, 20(10): 1833-1835.
2003, Vol. 20 
