Defects in GaN Films Grown on Si(111) Substrates by Metal-Organic Chemical Vapor Deposition
HU Gui-Qing1, KONG Xiang1, WAN Li1, WANG Yi-Qian1, DUAN Xiao-Feng1, LU Yuan2, LIU Xiang-Lin2
1Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
2Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Defects in GaN Films Grown on Si(111) Substrates by Metal-Organic Chemical Vapor Deposition
HU Gui-Qing1;KONG Xiang1;WAN Li1;WANG Yi-Qian1;DUAN Xiao-Feng1;LU Yuan2;LIU Xiang-Lin2
1Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
2Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Abstract： We report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AlN buffer layers by the metal-organic chemical vapor deposition method. The In0.1Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations passing through the MQW. No evident reduction of the edge dislocations density by the MQW was observed. It was found that dislocations with screw component can be located at the boundaries of sub-grains slightly in-plane misoriented.
HU Gui-Qing;KONG Xiang;WAN Li;WANG Yi-Qian;DUAN Xiao-Feng;LU Yuan;LIU Xiang-Lin. Defects in GaN Films Grown on Si(111) Substrates by Metal-Organic Chemical Vapor Deposition[J]. 中国物理快报, 2003, 20(10): 1811-1814.
HU Gui-Qing, KONG Xiang, WAN Li, WANG Yi-Qian, DUAN Xiao-Feng, LU Yuan, LIU Xiang-Lin. Defects in GaN Films Grown on Si(111) Substrates by Metal-Organic Chemical Vapor Deposition. Chin. Phys. Lett., 2003, 20(10): 1811-1814.
2003, Vol. 20 
