Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer
FANG Zhi-Dan, GONG Zheng, MIAO Zhen-Hua, XU Xiao-Hua, NI Hai-Qiao, NIU Zhi-Chuan
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer
FANG Zhi-Dan;GONG Zheng;MIAO Zhen-Hua;XU Xiao-Hua;NI Hai-Qiao;NIU Zhi-Chuan
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
81.15.Hi ,
85.30.Vw ,
78.55.Mb
Abstract ： Self-assembled InAs/GaAs quantum dots covered by the 1-nm Inx Al1-x As (x = 0.2,0.3) and 3-nm In0.2 Ga0.8 As combination strain-reducing layer are fabricated, whose height can take up to 30-46 nm. The luminescence emission at a long wavelength of 1.33 μm and the energy separation between the ground and the first-excited state of 86 meV are observed at room temperature. Furthermore, the comparative study proves that the energy separation can increase to 91 meV by multiple stacking.
Key words ：
81.15.Hi
85.30.Vw
78.55.Mb
出版日期: 2003-11-01
引用本文:
FANG Zhi-Dan;GONG Zheng;MIAO Zhen-Hua;XU Xiao-Hua;NI Hai-Qiao;NIU Zhi-Chuan. Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer[J]. 中国物理快报, 2003, 20(11): 2061-2063.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I11/2061
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2003, Vol. 20 
