Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices
YANG Zheng1, SHI Yi1, LIU Jian-Lin2, YAN Bo1, HUANG Zhuang-Xiong1, PU Lin1, ZHENG You-Dou1, WANG Kang-Long3
1Department of Physics and National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093
2Department of Electrical Engineering, University of
California at Riverside, Riverside, California 92521, USA 3Department of Electrical Engineering, University of
California at Los Angeles Los Angeles, California 90095-1594, USA
Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices
YANG Zheng1;SHI Yi1;LIU Jian-Lin2;YAN Bo1;HUANG Zhuang-Xiong1;PU Lin1;ZHENG You-Dou1;WANG Kang-Long3
1Department of Physics and National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093
2Department of Electrical Engineering, University of
California at Riverside, Riverside, California 92521, USA 3Department of Electrical Engineering, University of
California at Los Angeles Los Angeles, California 90095-1594, USA
Abstract： Raman scattering measurements were carried out in self-assembled Ge quantum dot superlattices grown by molecular beam epitaxy. The characteristics of the Ge-Ge, Si-Ge, Si-SiLOC and Si-Si peaks were investigated, especially the Ge-Ge optical phonon frequency shift was emphasized, which was tuned by the phonon confinement and strain effects. The experimentally observed frequency shift values of the Ge-Ge peak frequency caused by optical phonon confinement and strain in Ge quantum dots were discussed with quantitative calculations.
(Molecular, atomic, ion, and chemical beam epitaxy)
引用本文:
YANG Zheng;SHI Yi;LIU Jian-Lin;YAN Bo;HUANG Zhuang-Xiong;PU Lin;ZHENG You-Dou;WANG Kang-Long. Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices[J]. 中国物理快报, 2003, 20(11): 2001-2003.
YANG Zheng, SHI Yi, LIU Jian-Lin, YAN Bo, HUANG Zhuang-Xiong, PU Lin, ZHENG You-Dou, WANG Kang-Long. Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices. Chin. Phys. Lett., 2003, 20(11): 2001-2003.
2003, Vol. 20 
