Analytic Solution for In-Plane Valence Subbands of Strained SiGe Superlattice
LU Yan-Wu1 , SUN Gregory2
1 Department of Physics, Beijing Jiaotong University, Beijing 100044
2 Physics Department, University of Massachusetts at Boston, Boston, MA 02125, USA
Analytic Solution for In-Plane Valence Subbands of Strained SiGe Superlattice
LU Yan-Wu1 ;SUN Gregory2
1 Department of Physics, Beijing Jiaotong University, Beijing 100044
2 Physics Department, University of Massachusetts at Boston, Boston, MA 02125, USA
关键词 ：
71.15.-m ,
73.21.Cd ,
78.30.Am
Abstract ： Effective mass theory is used to calculate the in-plane valence subbands of strained SiGe superlattice within the 6 x 6 Luttinger model and under a correct boundary condition. The envelope wavefunctions are given analytically as a linear combination of bulk wavefuctions. The boundary conditions imposed on the envelope functions yield a 24 x 24 matrix, and from the zeros of its determinant the inplane energy dispersion E is obtained as a function of inplane wavevector k|| . We discuss the mixing among the heavy-hole, light-hole and spin-split-off states at finite k|| and the dependence of the dispersion on the spin-split-off band and strain.
Key words ：
71.15.-m
73.21.Cd
78.30.Am
出版日期: 2003-12-01
:
71.15.-m
(Methods of electronic structure calculations)
73.21.Cd
(Superlattices)
78.30.Am
(Elemental semiconductors and insulators)
引用本文:
LU Yan-Wu;SUN Gregory. Analytic Solution for In-Plane Valence Subbands of Strained SiGe Superlattice[J]. 中国物理快报, 2003, 20(12): 2226-2228.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I12/2226
[1]
LEI Zhen-Kun;KANG Yi-Lan;CEN Hao;HU Ming. Variability on Raman Shift to Stress Coefficient of Porous Silicon
[2]
SHANG Jia-Xiang;ZHAO Xiao-Dan. Electronic Structures and Giant Magnetoresistance of Co/Cu Superlattices with Different Orientations
[3]
MA Chun-Lan;PAN Tao. Electronic Structures of the Filled Tetrahedral Semiconductor Li3 AlN2
[4]
LI Zhi-Hua;GUO Li-Wei;WU Shu-Dong;WANG Wen-Xin;HUANG Qi;ZHOU Jun-Ming. Interface Properties of InAs/AlSb Superlattices Characterized by Grazing Incidence X-Ray Reflectivity
[5]
LEI Zhen-Kun;KANG Yi-Lan;CEN Hao;HU Ming;QIU Yu. Residual Stress on Surface and Cross-section of Porous Silicon Studied by Micro-Raman Spectroscopy
[6]
ZHANG Ying;GAO Ben-Qing. Propagation of Cylindrical Waves in Media of Time-Dependent Permittivity
[7]
XU Tian; CAO Zhuang-Qi;OU Yong-Cheng;ZHU Guo-Long. Accurate Bound-State Spectra for Hydrogenic Donors in GaAs--(Ga, Al)As Quantum Dots
[8]
YE Chao;YU Xiao-Zhu;WANG Ting-Ting;NING Zhao-Yuan;XIN Yu;JIANG Mei-Fu. Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma
[9]
TANG Shao-Qiang;ZHANG Da-Peng. Pseudo-Hydrodynamic Approximation for Transient Computation of Energy-Transport Models in Semiconductors
[10]
YI Zhi-Jun;LIU Ting-Yu;ZHANG Qi-Ren;SUN Yuan-Yuan. Electronic Structures of PbWO4 Crystals Containing F-Type Colour Centres
[11]
ZENG Yong-Zhi; HUANG Mei-Chun. Electronic and Magnetic Properties of 3d Transition-Metal-Doped III-V Magnetic Semiconductor
[12]
LEI Zhen-Kun; KANG Yi-Lan;QIU Yu; HU Ming; CEN Hao. Experimental Study of Capillary Effect in Porous Silicon Using Micro-Raman Spectroscopy and X-Ray Diffraction
[13]
LEI Zhen-Kun;KANG Yi-Lan;HU Ming;QIU Yu;XU Han;NIU Hong-Pan. An Experimental Analysis of Residual Stress Measurements in Porous Silicon Using Micro-Raman Spectroscopy
[14]
SU Chang-Rong;LI Jia-Ming;. Optimum Metallic-Bond Scheme: A Quantitative Analysis of Mass Spectra of Sodium Clusters
[15]
PEI Min;WANG Wei;PAN Bi-Cai;;LI Yong-Ping;. Calculation of Defects in Silicon by a New Tight-Binding Model
2003, Vol. 20 
