Wide-Band Polarisation-Insensitive High-Output-Power Semiconductor Optical Amplifier Based on Thin Tensile-Strained Bulk InGaAs
WANG Shu-Rong1,2, LIU Zhi-Hong1, WANG Wei1, ZHU Hong-Liang1, ZHANG Rui-Ying1, ZHOU Fan1, WANG Lu-Feng1, DING Ying1
1National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Institute of Solar Energy, Yunnan Normal University, Kunming 650092
Wide-Band Polarisation-Insensitive High-Output-Power Semiconductor Optical Amplifier Based on Thin Tensile-Strained Bulk InGaAs
WANG Shu-Rong1,2;LIU Zhi-Hong1;WANG Wei1;ZHU Hong-Liang1;ZHANG Rui-Ying1;ZHOU Fan1;WANG Lu-Feng1;DING Ying1
1National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Institute of Solar Energy, Yunnan Normal University, Kunming 650092
Abstract: A polarization-insensitive semiconductor optical amplifier (SOA) with a very thin active tensile-strained InGaAs bulk has been fabricated. The polarization sensitivity of the amplifier gain is less than 1 dB over both the entire range of driving current and the 3 dB optical bandwidth of more than 80 nm. For optical signals of 1550 nm wavelength, the SOA exhibits a high saturation output power +7.6 dBm together with a low noise figure of 7.5 dB, fibre-to-fibre gain of 11.5 dB, and low polarization sensitivity of 0.5 dB. Additionally, at the gain peak 1520 nm, the fibre-to-fibre gain is measured to be 14.1 dB.