Thin-Film Enhanced Goos-Hänchen Shift in Total Internal Reflection
LI Chun-Fang1,2, YANG Xiao-Yan1
1State Key Laboratory of Transient Optics Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710068
2Department of Physics, Shanghai University, Shanghai 200436
Thin-Film Enhanced Goos-Hänchen Shift in Total Internal Reflection
LI Chun-Fang1,2;YANG Xiao-Yan1
1State Key Laboratory of Transient Optics Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710068
2Department of Physics, Shanghai University, Shanghai 200436
Abstract： It is reported that the Goos-Hänchen (GH) shift of both TE and TM light beams totally reflected from a dielectric interface can be greatly enhanced by a dielectric thin film without changing the property of total internal reflection. Numerical simulations confirm the theoretical analysis and show that the enhanced GH shift can be as large as the width of the beam for beam's width up to 820 times of the wavelength. This may stimulate investigations in other areas of physics and may lead to interesting applications in optical devices. The enhancement of the GH shift is accompanied by the enhancement of the intensity of the decaying field in the optically thin medium and of the propagating field inside the film.
LI Chun-Fang;YANG Xiao-Yan. Thin-Film Enhanced Goos-Hänchen Shift in Total Internal Reflection[J]. 中国物理快报, 2004, 21(3): 485-488.
LI Chun-Fang, YANG Xiao-Yan. Thin-Film Enhanced Goos-Hänchen Shift in Total Internal Reflection. Chin. Phys. Lett., 2004, 21(3): 485-488.
2004, Vol. 21 
