Bootstrap Current Increment After Siliconization on the HT-7
Tokamak
ZHANG Xian-Mei1, WAN Bao-Nian2, LU Yuan-Cheng1
1Department of Physics, East China University of Science and Technology, Shanghai 200237
2Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031
Bootstrap Current Increment After Siliconization on the HT-7
Tokamak
ZHANG Xian-Mei1;WAN Bao-Nian2;LU Yuan-Cheng1
1Department of Physics, East China University of Science and Technology, Shanghai 200237
2Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031
Abstract： We present some results for the estimatation of the bootstrap current after siliconization on the HT-7 tokamak. After siliconization, the plasma pressure gradient and the electron temperature near the boundary are larger than that before siliconization. These factors influence the ratio of the bootstrap current to the total plasma current to increases from several percent to above 10%. The results are expected to explain the previous experimental phenomena that, after siliconization, the plasma current profile is broadened and the higher current can be obtained easily on the HT-7 tokamak experiment.
ZHANG Xian-Mei;WAN Bao-Nian;LU Yuan-Cheng. Bootstrap Current Increment After Siliconization on the HT-7
Tokamak[J]. 中国物理快报, 2002, 19(8): 1141-1143.
ZHANG Xian-Mei, WAN Bao-Nian, LU Yuan-Cheng. Bootstrap Current Increment After Siliconization on the HT-7
Tokamak. Chin. Phys. Lett., 2002, 19(8): 1141-1143.
YANG Qing-Wei;ZHOU Hang-Yu;FENG Bei-Bin;LIU Yi;PAN Yu-Dong;LI Wei;DUAN Xu-Ru;CHEN Wei;CUI Zheng-Ying;JI Xiao-Quan;DING Xuan-Tong;HL-A team. A New Criterion for Disruption Prediction on HL-2A[J]. 中国物理快报, 2006, 23(4): 891-894.
2002, Vol. 19 
