Molecular Dynamical Simulations on a-C:H Film Growth from C and H Atomic Flux: Effect of Incident Energy
QUAN Wei-Long1,2, LI Hong-Xuan1, ZHAO Fei1, JI Li1, DU Wen1, ZHOU Hui-Di1, CHEN Jian-Min1
1State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 2School of Mathematics, Physics and Software Engineering, Lanzhou Jiaotong University, Lanzhou 730070
Molecular Dynamical Simulations on a-C:H Film Growth from C and H Atomic Flux: Effect of Incident Energy
QUAN Wei-Long1,2, LI Hong-Xuan1, ZHAO Fei1, JI Li1, DU Wen1, ZHOU Hui-Di1, CHEN Jian-Min1
1State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 2School of Mathematics, Physics and Software Engineering, Lanzhou Jiaotong University, Lanzhou 730070
Molecular dynamical simulation is carried out to investigate the effects of the incident energy on a-C:H film growth from C and H atomic flux. Our simulations show that the film growth at low incident energy (1 eV) is dominated by the adsorption of H and C atoms. At moderate incident energy (10 and 20 eV), the abstraction reaction of incident H atoms with H atoms adsorbed at the surface becomes important. At high incident energy (30 and 40 eV), the a-C:H film growth is a two-step process: one is the adsorption and the shallow implantation of C atoms, and the other is the deep implantation of H atoms.
Molecular dynamical simulation is carried out to investigate the effects of the incident energy on a-C:H film growth from C and H atomic flux. Our simulations show that the film growth at low incident energy (1 eV) is dominated by the adsorption of H and C atoms. At moderate incident energy (10 and 20 eV), the abstraction reaction of incident H atoms with H atoms adsorbed at the surface becomes important. At high incident energy (30 and 40 eV), the a-C:H film growth is a two-step process: one is the adsorption and the shallow implantation of C atoms, and the other is the deep implantation of H atoms.
QUAN Wei-Long;LI Hong-Xuan;ZHAO Fei;JI Li;DU Wen;ZHOU Hui-Di;CHEN Jian-Min. Molecular Dynamical Simulations on a-C:H Film Growth from C and H Atomic Flux: Effect of Incident Energy[J]. 中国物理快报, 2010, 27(8): 88102-088102.
QUAN Wei-Long, LI Hong-Xuan, ZHAO Fei, JI Li, DU Wen, ZHOU Hui-Di, CHEN Jian-Min. Molecular Dynamical Simulations on a-C:H Film Growth from C and H Atomic Flux: Effect of Incident Energy. Chin. Phys. Lett., 2010, 27(8): 88102-088102.
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2010, Vol. 27 
