Terahertz signals emitted from three photoconductive antennae based on semi-insulating GaAs and with different gap sizes are tested. These signals represent that the distribution of electrical field between electrode gaps and electrical field enhancement on the anodes is testified. Two main causes of this phenomenon are the different movabilities of electrons and holes and the induced current which is brought by the electrons on arriving at the anodes. The electrical field distributes in a large region, which extends from tens to hundreds of micrometers and it is decided by the gap size.
Terahertz signals emitted from three photoconductive antennae based on semi-insulating GaAs and with different gap sizes are tested. These signals represent that the distribution of electrical field between electrode gaps and electrical field enhancement on the anodes is testified. Two main causes of this phenomenon are the different movabilities of electrons and holes and the induced current which is brought by the electrons on arriving at the anodes. The electrical field distributes in a large region, which extends from tens to hundreds of micrometers and it is decided by the gap size.
SHI Wei;ZHANG Zhen-Zhen;HOU Lei. Electrical Field Distribution in Terahertz SI-GaAs Photoconductive Antennas[J]. 中国物理快报, 2010, 27(8): 87203-087203.
SHI Wei, ZHANG Zhen-Zhen, HOU Lei. Electrical Field Distribution in Terahertz SI-GaAs Photoconductive Antennas. Chin. Phys. Lett., 2010, 27(8): 87203-087203.
[1] Liu H B, Member IEEE, Zhong H, Karpowicz N, Chen Y Q and Zhang X C, Fellow IEEE 2007 Proc. IEEE 95 1514 [2] Dreyhaupt A, Winnerl S, Dekorsy T and Helm M 2005 Appl. Phys. Lett. 86 121114 [3] Kemp M C, Taday P F, Cole B E, Cluff J A, Fitzgerald A J and Tribe W R 2003 Proc. SPIE 5070 44 [4] Rutz F, Wietzke S and Koch M 2006 ECNDT We.2.8.2 [5] Zhang X C and Auston D H 1992 J. Appl. Phys. 71 326 [6] Sanchez A R et al 2008 IEEE J. Sel. Top. Quantum Electron. 14 2 [7] Saldin E L, Schneidmiller E A and Yurkov M V 2008 Opt. Commun. 281 1179 [8] Liu H B, Chen Y Q, Bastiaans G J and Zhang X C 2006 Opt. Express 14 415 [9] Ralph S E and Grischkowsky D 1991 Appl. Phys. Lett. 59 16 [10] Darrow J T, Zhang X C and Auston D H 1992 IEEE J. Quantum Electron. 28 1607 [11] Salem B, Morris D, Aimez V et al 2005 Proc. SPIE 5727 193 [12] Xu M, Shi W, Hou L, Xue H, Wu S J and Dai H Y 2010 Chin. Phys. Lett. 27 024212 [13] Tian L Q and Shi W 2008 Chin. Phys. Lett. 25 2511 [14] Shi W et al 2009 Appl. Phys. Lett. 94 072110
2010, Vol. 27 
