Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline α-Al<suB>2</suB>O<suB>3</suB> Buffer Layer

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	JIANG Ruo-Lian
	WANG Jun-Zhuan
	CHEN Peng
	ZHAO Zuo-Ming
	MEI Yong-Feng
	SHEN Bo
	ZHANG Rong
	WU Xing-Long
	ZHENG You-Dou

关键词 ： 85.60.Bt, 78.66.Fd

Abstract： Using nearly polycrystalline α-Al₂O₃ as the buffer layer, GaN epilayers were grown on Si (111) substrates by low pressure metalorgnic chemical-vapor deposition. The nearly polycrystalline α-Al₂O₃ was formed by anodic porous alumina annealed at high temperature. Prototype photoconductive detectors were fabricated with these materials. The spectral response of these detectors exhibits a relatively sharp cutoff near the wavelength of 360 nm and a peak at 340 nm with a shoulder near 360 nm. Under 5 V bias, the responsivities at 340 nm and 360 nm were measured to be 3.3 A/W and 2.4 A/W, respectively. The relationship between the responsivity and the bias voltage shows that the responsivity is saturated when the bias voltage reaches 5 V.

Key words： 85.60.Bt 78.66.Fd

出版日期: 2002-10-01

:	85.60.Bt	(Optoelectronic device characterization, design, and modeling)
	78.66.Fd	(III-V semiconductors)

引用本文:

JIANG Ruo-Lian;WANG Jun-Zhuan;CHEN Peng;ZHAO Zuo-Ming;MEI Yong-Feng;SHEN Bo;ZHANG Rong;WU Xing-Long;ZHENG You-Dou. Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline α-Al₂O₃ Buffer Layer[J]. 中国物理快报, 2002, 19(10): 1553-1555.
JIANG Ruo-Lian, WANG Jun-Zhuan, CHEN Peng, ZHAO Zuo-Ming, MEI Yong-Feng, SHEN Bo, ZHANG Rong, WU Xing-Long, ZHENG You-Dou. Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline α-Al₂O₃ Buffer Layer. Chin. Phys. Lett., 2002, 19(10): 1553-1555.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2002/V19/I10/1553