Dislocation Movement in Nitrogen-Doped Czochralski Silicon
WEI Ya-dong1 , LIANG Jun-wu2
1 Department of Physics, Shanxi University, Taiyuan 030006
2 Institute of Semiconductor, Chinese Academy of Sciences, Beijiiig 100083
Dislocation Movement in Nitrogen-Doped Czochralski Silicon
WEI Ya-dong1 ;LIANG Jun-wu2
1 Department of Physics, Shanxi University, Taiyuan 030006
2 Institute of Semiconductor, Chinese Academy of Sciences, Beijiiig 100083
关键词 ：
61.72.Cc ,
81.40.Gh
Abstract ： Dislocation movement in N-doped Czochralski silicon ( Cz-Si ) was surveyed by four point bend method, Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated, The order of measured dislocation movement velocities, at 700°C ≤ T≤ 800°C and under resolved stress σ = 4.1 kg/ mm2 , was Vsb,O >VN,sb,O >VN,O . The experiments showed that nitrogen doping could retard the movement of dislocations.
Key words ：
61.72.Cc
81.40.Gh
出版日期: 1996-05-01
:
61.72.Cc
(Kinetics of defect formation and annealing)
81.40.Gh
(Other heat and thermomechanical treatments)
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1996, Vol. 13 
