Partial Disordering of GaAs/AlGaAs Quantum Well by Rapid Thermal Annealing
WANG Jian-hua, YU Guang-rui, JIN Feng, LI De-jie
National Integrated Optoelectronics Laboratory, Department of Electronic Engineering, Tsinghua University, Beijing 100084
Partial Disordering of GaAs/AlGaAs Quantum Well by Rapid Thermal Annealing
WANG Jian-hua;YU Guang-rui;JIN Feng;LI De-jie
National Integrated Optoelectronics Laboratory, Department of Electronic Engineering, Tsinghua University, Beijing 100084
关键词 ：
61.72.Cc ,
81.40.Ef ,
61.50.Ks
Abstract ： The partial disordering of GaAs/AlGaAs quantum well (QW) material has been obtained by rapid thermal annealing with SO2 dielectric capping film. In this case, the absorption edge of QW material was shifted apparently. A laser and a modulator were integrated on a same chip by partial disordering process on the select4d area of QW wafer which was grown by molecular beam epitaxy.
Key words ：
61.72.Cc
81.40.Ef
61.50.Ks
出版日期: 1996-07-01
:
61.72.Cc
(Kinetics of defect formation and annealing)
81.40.Ef
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
61.50.Ks
(Crystallographic aspects of phase transformations; pressure effects)
引用本文:
WANG Jian-hua;YU Guang-rui;JIN Feng;LI De-jie. Partial Disordering of GaAs/AlGaAs Quantum Well by Rapid Thermal Annealing[J]. 中国物理快报, 1996, 13(7): 531-533.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I7/531
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1996, Vol. 13 
