Band Gap Behaviors of (α-GaN) / (α-AIN) Superlattice and (β-GaN)/(β- A1N) Superlattice
KE San-huang, ZHANG Kai-ming, XIE Xi-de
Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433
Band Gap Behaviors of (α-GaN) / (α-AIN) Superlattice and (β-GaN)/(β- A1N) Superlattice
KE San-huang;ZHANG Kai-ming;XIE Xi-de
Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433
关键词 ：
73.20.Dx ,
71.25.Tn
Abstract ： By using an ab initio calculation, it is found that the variation of the fundamental band gap of (α-GaN)n / (α-AlN))n (0001) superlattices is remarkably different from that of (β-GaN))n / (β- A1N))n (001) superlattices. The difference in band gap behaviors was shown to be due to the internal electric fields induced by the spontaneous polarizations in α-GaN and α-AlN. In addition, the valence-band offsets at the interfaces of these superlattices are also determined. The results are in good agreement with those available from experimental data.
Key words ：
73.20.Dx
71.25.Tn
出版日期: 1996-10-01
引用本文:
KE San-huang;ZHANG Kai-ming;XIE Xi-de. Band Gap Behaviors of (α-GaN) / (α-AIN) Superlattice and (β-GaN)/(β- A1N) Superlattice[J]. 中国物理快报, 1996, 13(10): 786-789.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I10/786
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