Formation Energies and Electronic Structures of Native Defects in GaN
XIE Jian-jun, ZHANG Kai-ming, XIE Xi-de
Department of Physics, Fudan University, Shanghai 200433
Formation Energies and Electronic Structures of Native Defects in GaN
XIE Jian-jun;ZHANG Kai-ming;XIE Xi-de
Department of Physics, Fudan University, Shanghai 200433
关键词 ：
71.55.Eq ,
61. 72.Ji
Abstract ： The electronic structures and the formation energies of native point defects in cubic GaN have been studied via the linear muffin-tin orbital method. The results show that the nitrogen vacancy is the dominant defect in the intrinsic cubic GaN. Among the antisites and interstitial defects, it is found that a tetrahedral interstitial nitrogen atom surrounded by four Ga atoms NTGa is most easily formed, and the formation energy of NGa NGa antisite is much less than that of GaN antisite. The changes of the density of states due to the introduction of defects are discussed.
Key words ：
71.55.Eq
61. 72.Ji
出版日期: 1996-11-01
引用本文:
XIE Jian-jun;ZHANG Kai-ming;XIE Xi-de. Formation Energies and Electronic Structures of Native Defects in GaN[J]. 中国物理快报, 1996, 13(11): 867-869.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I11/867
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