Characterization of Pb( Zr0.53 Ti0.47 )O3 Films on GaN
LI Wei-Ping, ZHANG Rong, ZHOU Yu-Gang, YIN Jiang, SHEN Bo, SHI Yi, CHEN Zhi-Zhong, CHEN Peng, LIU Zhi-Guo, ZHENG You-Dou
Department of Physics and National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093
Characterization of Pb( Zr0.53 Ti0.47 )O3 Films on GaN
LI Wei-Ping;ZHANG Rong;ZHOU Yu-Gang;YIN Jiang;SHEN Bo;SHI Yi;CHEN Zhi-Zhong;CHEN Peng;LIU Zhi-Guo;ZHENG You-Dou
Department of Physics and National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093
关键词 ：
81.05.Ea ,
81.05.Je
Abstract ： GaN/Pb(Zr0.53 Ti0.47 )O3 structures have been fabricated by light radiation heating low-pressure metal-organic chemical deposition and pulsed laser deposition. These structures show leakage current lower than 10-11 A at applied voltage of 5 V. X-ray diffraction shows that ferroelectric Pb (Zr0.53 Ti0.47 )O3 films directly on GaN are well crystallized with perovskite structure. Because of the high thermal stability and relatively smaller mismatch between GaN and ferroelectrics in comparison with that of Si/ferroelectric structures, GaN looks like more promising as semiconductor active layer for metal-ferroelectric-semiconductor field effect transistors.
Key words ：
81.05.Ea
81.05.Je
出版日期: 2000-02-01
:
81.05.Ea
(III-V semiconductors)
81.05.Je
(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
引用本文:
LI Wei-Ping;ZHANG Rong;ZHOU Yu-Gang;YIN Jiang;SHEN Bo;SHI Yi;CHEN Zhi-Zhong;CHEN Peng;LIU Zhi-Guo;ZHENG You-Dou
. Characterization of Pb( Zr0.53 Ti0.47 )O3 Films on GaN[J]. 中国物理快报, 2000, 17(2): 137-138.
0.53 Ti0.47 )O3 Films on GaN. Chin. Phys. Lett., 2000, 17(2): 137-138.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2000/V17/I2/137
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2000, Vol. 17 
