Order-Disorder Transition in C60: Possible Role of Stacking Faults
GU Min1,2, Tong B. Tang2, WANG Ye-ning1, YAN Feng1, FENG Duan1
1National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093
2Department of Physics, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong
Order-Disorder Transition in C60: Possible Role of Stacking Faults
GU Min1,2;Tong B. Tang2;WANG Ye-ning1;YAN Feng1;FENG Duan1
1National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093
2Department of Physics, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong
Abstract： Differential scanning calorimetry revealed a secondary transition at a lower temperature besides the order-disorder phase transition near 260K in powders, not in single crystals, of C60 from which solvents and impurities had been carefully excluded. This is attributed to phase transformation facilitated by nucleation around stacking faults. This proposal is supported by internal friction measurements on films, which confirmed the presence of this secondary transition, and by x-ray diffraction, which detected an hcp structure within the fcc lattice of C60 at room temperature.
GU Min;Tong B. Tang;WANG Ye-ning;YAN Feng;FENG Duan. Order-Disorder Transition in C60: Possible Role of Stacking Faults[J]. 中国物理快报, 1998, 15(5): 357-359.
GU Min, Tong B. Tang, WANG Ye-ning, YAN Feng, FENG Duan. Order-Disorder Transition in C60: Possible Role of Stacking Faults. Chin. Phys. Lett., 1998, 15(5): 357-359.
1998, Vol. 15 
