Asymmetry in the Vertically Aligned Growth Induced InAs Islands in GaAs
GONG Qian, WU Ju, XU Bo, LIANG Ji-ben, FAN Ti-wen, WANG Zhan-guo, BAI Yuan-qiang1
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
1Department of Materials, Beijing University of Science and Technology, Beijing 100083
Asymmetry in the Vertically Aligned Growth Induced InAs Islands in GaAs
GONG Qian;WU Ju;XU Bo;LIANG Ji-ben;FAN Ti-wen;WANG Zhan-guo;BAI Yuan-qiang1
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
1Department of Materials, Beijing University of Science and Technology, Beijing 100083
Abstract： A 10-InAs-island-layer vertically coupled quantum dot structure on (001) GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy. The result shows that the vertically aligned InAs islands are asymmetrical along the two < 110 > directions on the (001) growth plane. Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the III-V compound semiconductors.
GONG Qian;WU Ju;XU Bo;LIANG Ji-ben;FAN Ti-wen;WANG Zhan-guo;BAI Yuan-qiang. Asymmetry in the Vertically Aligned Growth Induced InAs Islands in GaAs[J]. 中国物理快报, 1998, 15(7): 519-521.
GONG Qian, WU Ju, XU Bo, LIANG Ji-ben, FAN Ti-wen, WANG Zhan-guo, BAI Yuan-qiang. Asymmetry in the Vertically Aligned Growth Induced InAs Islands in GaAs. Chin. Phys. Lett., 1998, 15(7): 519-521.
1998, Vol. 15 
