Optical and Electric and Structural Properties of Til-xAIxN Thin Films
LI Zuo-yi, XIONG Rui, YANG Xiao-fei, HU Zuo-qi, XU Ying, LIN Geng-qi, LU Zhi-hong1
Department of Solid State Electronics, Huazhong University of Science and Technology, Wuhan 430074
1Shanghai Institute of Metallugy, Chinese Academy of Sciences, Shanghai 200050
Optical and Electric and Structural Properties of Til-xAIxN Thin Films
LI Zuo-yi;XIONG Rui;YANG Xiao-fei;HU Zuo-qi;XU Ying;LIN Geng-qi;LU Zhi-hong1
Department of Solid State Electronics, Huazhong University of Science and Technology, Wuhan 430074
1Shanghai Institute of Metallugy, Chinese Academy of Sciences, Shanghai 200050
Abstract: A sequence of Til-xAIxN films has been prepared by rf reactive magnetron sputtering. The optical and electric properties versus aluminum content x have been studied. Values suitable for magneto-optic protective layers have been achieved in Til-xAIx N thin films with aluminum content x > 0.75. X-ray diffraction results show that Til-xAIx N thin films in this study are a bcc structure up to x = 0.75, further increase in the aluminum content gives a wurtzite structure. All of the results show that the optical and electric properties of Til-xAIx N films might be related to the crystal structure.
LI Zuo-yi;XIONG Rui;YANG Xiao-fei;HU Zuo-qi;XU Ying;LIN Geng-qi;LU Zhi-hong. Optical and Electric and Structural Properties of Til-xAIxN Thin Films[J]. 中国物理快报, 1998, 15(7): 533-534.
LI Zuo-yi, XIONG Rui, YANG Xiao-fei, HU Zuo-qi, XU Ying, LIN Geng-qi, LU Zhi-hong. Optical and Electric and Structural Properties of Til-xAIxN Thin Films. Chin. Phys. Lett., 1998, 15(7): 533-534.
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