Anomalous Dielectric Behavior in Nanometer-Sized Amorphous Silicon Nitride
WANG Tao, ZHANG Lide, MOU Jimei*
Institute of Solid State Physics, Academia Sinica, Eefei 230031
*Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026
Anomalous Dielectric Behavior in Nanometer-Sized Amorphous Silicon Nitride
WANG Tao;ZHANG Lide;MOU Jimei*
Institute of Solid State Physics, Academia Sinica, Eefei 230031
*Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026
Abstract： An anomalous dielectric behavior in nanometer-sized amorphous silicon nitride is reported. The dielectric constant of nanometer-sized amorphous silicon nitride has strong dependence on frequency at room temperature (RT), which is completely different from the conventional coarse-grain silicon nitride. The maximum of the dielectric constant of nanometer-sized amorphous silicon nitride-at RT is about 40 times larger than that of the conventional silicon nitride. The anomalous dielectric behavior is explained by a kind of mechanism of polarization, that is, interfacial polarization.
1993, Vol. 10 
