Improved Activation of Mg+ and P+ Dual Implantation into GaAs
SHEN Honglie, ZHOU Zuyao, XIA Guanqun, ZOU Shichang
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
Improved Activation of Mg+ and P+ Dual Implantation into GaAs
SHEN Honglie;ZHOU Zuyao;XIA Guanqun;ZOU Shichang
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
关键词 ：
72.80.Ey ,
61.70.Tm ,
61.70.Wp
Abstract ： Co-implantation of phosphorus was used to enhance the activation of the implanted magnesium in GaAs. Improved activations were observed in dually implanted samples by either furnace annealing or rapid thermal annealing. For dose of 5x1014 cm-2 Mg+ , an activation of 74% with a sheet resistance 216Ω/⊗ was obtained for dual implant compared to the activation of 33% and sheet resistance of 367Ω/⊗ for single implant after rapid thermal annealing. The results suggest that the high carrier concentration can be obtained by this technique.
Key words ：
72.80.Ey
61.70.Tm
61.70.Wp
出版日期: 1991-05-01
引用本文:
SHEN Honglie;ZHOU Zuyao;XIA Guanqun;ZOU Shichang. Improved Activation of Mg+ and P+ Dual Implantation into GaAs[J]. 中国物理快报, 1991, 8(5): 225-228.
+ and P+ Dual Implantation into GaAs. Chin. Phys. Lett., 1991, 8(5): 225-228.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1991/V8/I5/225
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1991, Vol. 8 
