Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells
Shahzad Naseem
Centre for Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore (PAKISTAN).
Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells
Shahzad Naseem
Centre for Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore (PAKISTAN).
关键词 ：
73.40.Lq ,
81.15.Ef
Abstract ： Cadmium telluride thin films were prepared by vacuum evaporation of CdTe powder in an attempt to fabricate all thin film solar cells of the type CdTe/CdS. Characterization of CdTe has shown it to have a band gap of 1.522eV and a resistivity of 22Ω-cm. As prepared, solar cells exhibited low values of output parameters. Given quantity of copper was then deposited on top of the CdTe/CdS solar cells and the whole system was annealed at 350°C. This copper doping changed the output parameters favorably with a maximum efficiency of 1.9%.
Key words ：
73.40.Lq
81.15.Ef
出版日期: 1991-05-01
:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
81.15.Ef
引用本文:
Shahzad Naseem. Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells[J]. 中国物理快报, 1991, 8(5): 255-258.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1991/V8/I5/255
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