Abstract： The films of a-SiC:H were deposited by plasma enhanced chemical vapor deposition system from SiH4+ C2H2 gas mixtures. The C-rich a-SiC:H films were easily obtained by using C2H2 gases due to the low dissociation energy of C2H2 molecule in the plasma. Thus, the carbon was effectively incorporated into a-Si:H network. Although the defect state densities were proportional to carbon content in a-SiC:H films, the photoluminescence intensities were not directly related with defect density, yet increased with the carbon content increasing. The infrared spectra indicated that CHn groups as clusters were incorporated mainly into a-SiC:H network. The little correlation of the PL integrated intensity with defect state density suggested that luminescence was associated with clusters as a largely intracluster process.
LIU Yi-chun;LIU Chun-guang;CHEN Da-wei;LIU Yu-xue;BAI Yu-bai;LI Tie-jin. Photoluminescence Properties of a-SiC:H Films Grown by Plasma Enhanced Chemical Vapor Deposition from SiH4+C2H2 Gas Mixtures[J]. 中国物理快报, 1998, 15(11): 837-839.
LIU Yi-chun, LIU Chun-guang, CHEN Da-wei, LIU Yu-xue, BAI Yu-bai, LI Tie-jin. Photoluminescence Properties of a-SiC:H Films Grown by Plasma Enhanced Chemical Vapor Deposition from SiH4+C2H2 Gas Mixtures. Chin. Phys. Lett., 1998, 15(11): 837-839.
1998, Vol. 15 
