Abstract： The allotropic effect on the electronic topping power of protons in solids was systematically determined by the nuclear resonance reaction 27Al (p ,γ) 28Si at Ep =774 and 992ke V in an silicon on sapphire (SOS) sample of epitaxial Si on sapphire. Details of the experimental technique are described. The experimental error is less than3 %.
MA zhongquan*;LIU Jiarui;ZHU Peiran. STOPPING POWER OF PROTON IN MONOCRYSTALLINE, POLYCRYSTALLINE AND AMORPHOUS SILICON
[J]. 中国物理快报, 1990, 7(5): 226-229.
MA zhongquan*, LIU Jiarui, ZHU Peiran. STOPPING POWER OF PROTON IN MONOCRYSTALLINE, POLYCRYSTALLINE AND AMORPHOUS SILICON
. Chin. Phys. Lett., 1990, 7(5): 226-229.
1990, Vol. 7 
