Thermal Stress Analysis of Floating-Gate Tunneling Oxide Electrically Erasable Programmable Read Only Memory During Manufacturing Process
ZONG Xiang-fu1 , WANG Xu1 , WENG Yu-min1 , YAN Ren-jin1 , TANG Guo-an2 , ZHANG Zhao-qiang1
1 Institute of Materials Science, 2 Department of Mechanics, Fudan University, Shanghai 200433
Thermal Stress Analysis of Floating-Gate Tunneling Oxide Electrically Erasable Programmable Read Only Memory During Manufacturing Process
ZONG Xiang-fu1 ;WANG Xu1 ;WENG Yu-min1 ;YAN Ren-jin1 ;TANG Guo-an2 ;ZHANG Zhao-qiang1
1 Institute of Materials Science, 2 Department of Mechanics, Fudan University, Shanghai 200433
关键词 ：
81.40.Lm ,
62.20.Fe ,
61.20.Ja
Abstract ： In this study, finite element modeling was used to evaluate the residual thermal stress in floating-gate tunneling oxide electrically erasable programmable read only memory (FLOTOX E2 PROMs) manufacturing process. Special attention is paid to the tunnel oxide region, in which high field electron injection is the basis to E2 PROMs operation. Calculated results show the presence of large stresses and stress gradients at the fringe: This may contribute to the invalidation of E2 PROMs. A possible failure mechanism of E2 PROM related to residual thermal stress-induced leakage is proposed.
Key words ：
81.40.Lm
62.20.Fe
61.20.Ja
出版日期: 1998-10-01
引用本文:
ZONG Xiang-fu;WANG Xu;WENG Yu-min;YAN Ren-jin;TANG Guo-an;ZHANG Zhao-qiang. Thermal Stress Analysis of Floating-Gate Tunneling Oxide Electrically Erasable Programmable Read Only Memory During Manufacturing Process[J]. 中国物理快报, 1998, 15(10): 767-769.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I10/767
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