Perimeter Effects on Heavy Doping GaAs Diodes
SHI Xiao-zhong, WANG Le, XIA Guan-qun
Department of Semiconductor Materials and Devices, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
Perimeter Effects on Heavy Doping GaAs Diodes
SHI Xiao-zhong;WANG Le;XIA Guan-qun
Department of Semiconductor Materials and Devices, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
73.40.Kp
Abstract ： The influence of perimeter effects on dark I-V characteristics of GaAs diode is investigated experimentally. The results indicate that the diodes with high energy states density will be more easily shorted than that with low energy states density during alloying. The possibility of shunt short of GaAs diode increases with the decrease of the distance between the front contact and pn junction. The AlGaAs layers enhance the dark current.
Key words ：
73.40.Kp
出版日期: 1998-05-01
:
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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1998, Vol. 15 
