Binding Energy of Biexcitons in Two-Dimensional Semiconductors
LIU Jian-jun1,2 , KONG Xiao-jun1,2 , WEI Cheng-wen1,2 , LI Shu-shen1
1 National Laboratory for Superlattices and Microstructures, Beijing 100083
2 Department of Physics, Hebei Normal University, Shijiazhuang 050016
Binding Energy of Biexcitons in Two-Dimensional Semiconductors
LIU Jian-jun1,2 ;KONG Xiao-jun1,2 ;WEI Cheng-wen1,2 ;LI Shu-shen1
1 National Laboratory for Superlattices and Microstructures, Beijing 100083
2 Department of Physics, Hebei Normal University, Shijiazhuang 050016
关键词 ：
71.35.+z ,
73.20.Dx
Abstract ： The binding energies of a two-dimensional (2D) biexciton have been calculated variationally for all values of the effective electron-to-hole mass ratio u by using a three-parameter wave function. The ratio of the binding energy of a 2D biexciton to that of a 2D exciton is found to be from 0.582 to 0.220. The results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.
Key words ：
71.35.+z
73.20.Dx
出版日期: 1998-08-01
引用本文:
LIU Jian-jun;KONG Xiao-jun;WEI Cheng-wen;LI Shu-shen. Binding Energy of Biexcitons in Two-Dimensional Semiconductors[J]. 中国物理快报, 1998, 15(8): 588-560.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I8/588
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