Ge Related-Defect Energy and Microcavity Effect in GaN Epitaxial Layer
ZHAO Yi-guang1,2, CHENG Lei1,2, HUANG Xian-ling1,2, ZHANG Guo-yi3, LI Jing3, YANG Zhi-jian3
1Department of Physics, Peking University, Beijing 100871
2National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
3Department of Physics, Mesoscopic Physics Laboratory, Peking University, Beijing 100871
Ge Related-Defect Energy and Microcavity Effect in GaN Epitaxial Layer
1Department of Physics, Peking University, Beijing 100871
2National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
3Department of Physics, Mesoscopic Physics Laboratory, Peking University, Beijing 100871
Abstract： Using solid-phase regrowth technique, Pd/Ge contact has been made on the GaN layer, and very good ohmic behavior was observed for the contact. The Photoluminescence (PL) spectra for different structures formed by the Pd/Ge contact, GaN layer, sapphire substrate, and mirror were studied, and a defect-assisted transition was found at 450nm related to Ge impurity. The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.
ZHAO Yi-guang;CHENG Lei; HUANG Xian-ling;ZHANG Guo-yi;LI Jing;YANG Zhi-jian. Ge Related-Defect Energy and Microcavity Effect in GaN Epitaxial Layer[J]. 中国物理快报, 1998, 15(9): 674-676.
ZHAO Yi-guang, CHENG Lei, HUANG Xian-ling, ZHANG Guo-yi, LI Jing, YANG Zhi-jian. Ge Related-Defect Energy and Microcavity Effect in GaN Epitaxial Layer. Chin. Phys. Lett., 1998, 15(9): 674-676.
1998, Vol. 15 
