CHARACTERIZATION OF Si-SiO<suB>2</suB> INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE

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	LU Liwu
	G.Groesendken
	C.Hasenack

关键词 ： 73.40.Qv

Abstract： The D_it (interface states density) in p-type MOS capacitors subjected to a preoxidation heat treatment was investigated by using DLTS (Deep Level Transient Spectroscopy) technique. It is found that the strong dependence of the D_it on POHT (Preoxidation Heat Treatment) and starting oxygen content of substrates is expected. The DLTS technique can detects the presence of bulk defect (E_t-E_v=0.29eV) at the interface presumably due to chlorine species.

Key words： 73.40.Qv

出版日期: 1989-12-01

73.40.Qv

(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

引用本文:

LU Liwu*;G.Groesendken;C.Hasenack. CHARACTERIZATION OF Si-SiO₂ INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE [J]. 中国物理快报, 1989, 6(12): 545-548.
LU Liwu*, G.Groesendken, C.Hasenack. CHARACTERIZATION OF Si-SiO₂ INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE . Chin. Phys. Lett., 1989, 6(12): 545-548.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y1989/V6/I12/545