Enhanced Hole Injection and Brightness of Organic Electroluminescent Devices with Indium Tin Oxide Surface Modification Using Oxygen Plasma Treatment
XIE Zhi-yuan1 , HUANG Jing-song1 , CHEN Bai-jun1 , HOU Jing-ying1 , NAN Jin2 , DAI Guo-rui2 , LIU Shi-yong2
1 National Integrated Optoelectronics Laboratory,
2 Department of Electronic Engineering, Jilin University, Changchun 130023
Enhanced Hole Injection and Brightness of Organic Electroluminescent Devices with Indium Tin Oxide Surface Modification Using Oxygen Plasma Treatment
XIE Zhi-yuan1 ;HUANG Jing-song1 ;CHEN Bai-jun1 ;HOU Jing-ying1 ;NAN Jin2 ;DAI Guo-rui2 ;LIU Shi-yong2
1 National Integrated Optoelectronics Laboratory,
2 Department of Electronic Engineering, Jilin University, Changchun 130023
关键词 ：
78.60.Fi ,
78.66.Qn ,
85.60.Jb
Abstract ： The improvement of indium tin oxide (ITO) anode contact to organic electroluminescent devices via oxygen plama-treatment is investigated. Enhanced hole-injection efficiency improved the performance of organic light-emitting devices. The injection current increased by 1-2 orders of magnitude and the turn-on voltages droped several volts. Much higher injection current could be applied to achieve much higher brightness. Maximum brightness and luminous efficiency can reach to about 4000 cd/m2 and 0.31m/W for the structure of ITO/TPD/Alq3 /Al, respectively.
Key words ：
78.60.Fi
78.66.Qn
85.60.Jb
出版日期: 1998-07-01
引用本文:
XIE Zhi-yuan;HUANG Jing-song;CHEN Bai-jun;HOU Jing-ying;NAN Jin;DAI Guo-rui;LIU Shi-yong. Enhanced Hole Injection and Brightness of Organic Electroluminescent Devices with Indium Tin Oxide Surface Modification Using Oxygen Plasma Treatment[J]. 中国物理快报, 1998, 15(7): 537-538.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I7/537
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1998, Vol. 15 
