Photoluminescence from Erbium-Implanted Silicon-Rich SiO2
LEI Hong-bing, YANG Qin-qing, ZHU Jia-lian, GAO Jun-hua, WANG Hong-jie, WANG Qi-ming
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Photoluminescence from Erbium-Implanted Silicon-Rich SiO2
LEI Hong-bing;YANG Qin-qing;ZHU Jia-lian;GAO Jun-hua;WANG Hong-jie;WANG Qi-ming
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
78.55.Ap ,
78.55.-m
Abstract ： Si-rich SiO2 films were deposited by plasma-enhanced chemical vapor deposition on the silicon substrates, and then implanted with 1 ×1015 cm-2 400 keV Er ions. After annealing at 800°C for 5 min, the samples show room temperature luminescence around 1.54 μm, characteristic of intra-4f emission from Er3+ , upon excitation using an Ar ion laser.
Key words ：
78.55.Ap
78.55.-m
出版日期: 1998-01-01
:
78.55.Ap
(Elemental semiconductors)
78.55.-m
(Photoluminescence, properties and materials)
引用本文:
LEI Hong-bing;YANG Qin-qing;ZHU Jia-lian;GAO Jun-hua;WANG Hong-jie;WANG Qi-ming. Photoluminescence from Erbium-Implanted Silicon-Rich SiO2 [J]. 中国物理快报, 1998, 15(1): 72-73.
2 . Chin. Phys. Lett., 1998, 15(1): 72-73.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I1/72
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1998, Vol. 15 
