Application of Reactive Ion Etching to the Fabrication of Microstructure on Mo/Si Multilayer
LE Zi-chun1, L. Dreeskornfeld2, S. Rahn2, R. Segler2, U. Kleineberg2, U. Heinzmann2
1Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012
2Fakultät für Physik, Universität Bielefeld, Universitatsstraβe 25, D-33615 Bielefeld, Germany
Application of Reactive Ion Etching to the Fabrication of Microstructure on Mo/Si Multilayer
LE Zi-chun1;L. Dreeskornfeld2;S. Rahn2;R. Segler2;U. Kleineberg2;U. Heinzmann2
1Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012
2Fakultät für Physik, Universität Bielefeld, Universitatsstraβe 25, D-33615 Bielefeld, Germany
Abstract： Mo/Si multilayer mirrors (30 periods, doublelayer thickness 7nm) with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5μm were etched by reactive ion etching (RIE) in a fluorinated plasma. The etch rate, selectivity and etch profile were investigated as a function of the gas mixture, pressure, and plasma rf power. The groove depth and the etch profile were investigated by an atomic force microscope before RIE, after RIE and after resist removal.
LE Zi-chun;L. Dreeskornfeld;S. Rahn;R. Segler;U. Kleineberg;U. Heinzmann. Application of Reactive Ion Etching to the Fabrication of Microstructure on Mo/Si Multilayer[J]. 中国物理快报, 1999, 16(9): 665-666.
LE Zi-chun, L. Dreeskornfeld, S. Rahn, R. Segler, U. Kleineberg, U. Heinzmann. Application of Reactive Ion Etching to the Fabrication of Microstructure on Mo/Si Multilayer. Chin. Phys. Lett., 1999, 16(9): 665-666.
1999, Vol. 16 
