Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation
CHEN Zhi-quan, WANG Zhu, WANG Shao-jie
Department of Physics, Wuhan University, Wuhan 430072
Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation
CHEN Zhi-quan;WANG Zhu;WANG Shao-jie
Department of Physics, Wuhan University, Wuhan 430072
关键词 ：
61.72.Ji ,
78.70.Bj ,
71.55.Eq
Abstract ： Positron lifetime spectra were measured for three Zn doped p-InP samples as a function of temperature. Interaction of Zn dopants and native P vacancies was observed under thermal activation. It is found that the formation of Zn-Vp complex has a correlation with the carrier concentration. The formation mechanism of the complex was tentatively discussed.
Key words ：
61.72.Ji
78.70.Bj
71.55.Eq
出版日期: 1999-08-01
引用本文:
CHEN Zhi-quan;WANG Zhu;WANG Shao-jie. Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation[J]. 中国物理快报, 1999, 16(8): 586-588.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I8/586
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1999, Vol. 16 
