Simulation of Nucleation of Anisotropic Si Islands on Reconstructed Si(100)(2x1) Surface
WU Feng-min1 , ZHANG Jie-fang1 , ZHU Qi-peng1 , WU Zi-qin2
1 Institute of Technical Physics, Zhejiang University of Technology, Hangzhou 310014
2 Center of Fundamental Physics, University of Science and Technology of China, Hefei 230026
Simulation of Nucleation of Anisotropic Si Islands on Reconstructed Si(100)(2x1) Surface
WU Feng-min1 ;ZHANG Jie-fang1 ;ZHU Qi-peng1 ;WU Zi-qin2
1 Institute of Technical Physics, Zhejiang University of Technology, Hangzhou 310014
2 Center of Fundamental Physics, University of Science and Technology of China, Hefei 230026
关键词 ：
68.35.-p ,
68.55.-a ,
68.70.+w
Abstract ： The nucleation of anisotropic Si islands on reconstructed Si(100)(2x1) surface has been studied by computer simulation, in which the anisotropic diffusion rate along different direction of the substrate is included. Some results such as anisotropic islands formed at various substrate temperatures, the number of islands (including single Si dimers) with different anisotropic diffusion are obtained. It is shown that the shape and number of anisotropic Si islands are dependent obviously on the substrate temperature and the anisotropic diffusion. The simulation results are consistent with the experimental observations.
Key words ：
68.35.-p
68.55.-a
68.70.+w
出版日期: 1999-09-01
:
68.35.-p
(Solid surfaces and solid-solid interfaces: structure and energetics)
68.55.-a
(Thin film structure and morphology)
68.70.+w
(Whiskers and dendrites (growth, structure, and nonelectronic properties))
引用本文:
WU Feng-min;ZHANG Jie-fang;ZHU Qi-peng;WU Zi-qin. Simulation of Nucleation of Anisotropic Si Islands on Reconstructed Si(100)(2x1) Surface[J]. 中国物理快报, 1999, 16(9): 677-679.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I9/677
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1999, Vol. 16 
