Electron Tunneling in nc-Si/a-SiO2 Double-Barrier Diode
LU Hai, GU Xiao-feng, QIN Hua, LI Wei, CHEN Kun-ji, HUANG Xin-fan
State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
Electron Tunneling in nc-Si/a-SiO2 Double-Barrier Diode
LU Hai;GU Xiao-feng;QIN Hua;LI Wei;CHEN Kun-ji;HUANG Xin-fan
State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
关键词 ：
73.40.Gk
Abstract ： A single layer of nc-Si dots with 10nm in diameter embedded in a-SiO2 matrix is formed by the plasma enhanced chemical vapor deposition in a high hydrogen diluted silane plasma and followed by thermal annealing treatment. Based on this structure, an a-SiO2 /nc-Si/a-SiO2 double barrier diode is fabricate. The transport characteristics of this diode exhibit a series of reproducible conductance peaks at room temperature. An equivalent circuit method is introduced to determine the real voltage spacing between adjacent conductance peaks. The results are in good agreement with the calculated values based on the Coulomb blockade effect.
Key words ：
73.40.Gk
出版日期: 1998-03-01
引用本文:
LU Hai;GU Xiao-feng;QIN Hua;LI Wei;CHEN Kun-ji;HUANG Xin-fan. Electron Tunneling in nc-Si/a-SiO2 Double-Barrier Diode[J]. 中国物理快报, 1998, 15(3): 216-218.
2 Double-Barrier Diode. Chin. Phys. Lett., 1998, 15(3): 216-218.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I3/216
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