Magnetoresistance and Interlayer Exchange Coupling in Ferromagnetic/Nonmagnetic/Insulator (Semiconductor) /Ferromagnetic Tunnel Junctions
ZHANG Wu-shou, LI Bo-zang
Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080
Magnetoresistance and Interlayer Exchange Coupling in Ferromagnetic/Nonmagnetic/Insulator (Semiconductor) /Ferromagnetic Tunnel Junctions
ZHANG Wu-shou;LI Bo-zang
Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
75.70.-i ,
73.50.Jt
Abstract ： Based on the two-band model and free-electron approximation, a treatment of the magnetoresistance (MR) and interlayer exchange coupling (IEC) for ferromagnetic/nonmagnetic/insulator (semiconductor)/ferromagnetic tunnel junctions is presented. It is found that properties of the junctions are intermediate between tunnel junctions and metallic magnetic multilayers. The MR and IEC are all the oscillatory functions of the thickness of nonmagnetic layer. The results have potential in designing spin-polarized tunneling devices with large field-sensitivity.
Key words ：
75.70.-i
73.50.Jt
出版日期: 1998-04-01
:
75.70.-i
(Magnetic properties of thin films, surfaces, and interfaces)
73.50.Jt
(Galvanomagnetic and other magnetotransport effects)
引用本文:
ZHANG Wu-shou;LI Bo-zang. Magnetoresistance and Interlayer Exchange Coupling in Ferromagnetic/Nonmagnetic/Insulator (Semiconductor) /Ferromagnetic Tunnel Junctions[J]. 中国物理快报, 1998, 15(4): 296-298.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I4/296
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