Optical Transitions in Cubic GaN Grown by Metalorganic Chemical Vapor Deposition on GaAs (100) Substrate
CHEN Ye1, LI Guo-Hua1, HAN He-Xiang1, WANG Zhao-Ping1, XU Da-Peng2, YANG Hui2
1National Laboratory for Superlattices and Microstructures, 2National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Optical Transitions in Cubic GaN Grown by Metalorganic Chemical Vapor Deposition on GaAs (100) Substrate
1National Laboratory for Superlattices and Microstructures, 2National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract： Photoluminescence measurements have been performed on cubic GaN films with carrier concentration as low as 3x1013 cm-3. From the temperature and excitation intensity dependence, the emission lines at 3.268, 3.150 and 3.081 eV were assigned to the excitonic, donor-acceptor pair, and free-to-acceptor transitions, respectively. Additionallx we observed two additional emission lines at 2.926 and 2.821 eV, and suggested that they belong to donor-acceptor pair transitions. Furthermore, from the temperature dependence of integral intensities, we confirmed that three donor-acceptor pair transitions (3.150, 2.926, and 2.821 eV) are from a common shallow donor to three different acceptors. The excitonic emission at 3.216 eV has a full-width-at-half-maximum value of 41 meV at room temperature, which indicates a good optical quality of our sample.
CHEN Ye;LI Guo-Hua;HAN He-Xiang;WANG Zhao-Ping;XU Da-Peng;YANG Hui. Optical Transitions in Cubic GaN Grown by Metalorganic Chemical Vapor Deposition on GaAs (100) Substrate[J]. 中国物理快报, 2000, 17(8): 612-614.
CHEN Ye, LI Guo-Hua, HAN He-Xiang, WANG Zhao-Ping, XU Da-Peng, YANG Hui. Optical Transitions in Cubic GaN Grown by Metalorganic Chemical Vapor Deposition on GaAs (100) Substrate. Chin. Phys. Lett., 2000, 17(8): 612-614.
2000, Vol. 17 
