Field Emission from Acid Treated Diamond Films
YUAN Guang1 , JI Hong2 , HAN Li3 , WANG Xiu-feng3 , GU Chang-zhi2 , ZHANG Bao-lin1 , JIANG Hong1 , WANG Yong-zhen1 , ZHAO Hai-feng1 , TIAN Yuan1 , JIN Chang-chun1 , JIN Yi-xin1
1 Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021
2 National Laboratory for Superhard Materials, Jilin University, Changchun 130023
3 Department of Physics, Tsinghua University, Beijing 100084
Field Emission from Acid Treated Diamond Films
YUAN Guang1 ;JI Hong2 ;HAN Li3 ;WANG Xiu-feng3 ;GU Chang-zhi2 ;ZHANG Bao-lin1 ;JIANG Hong1 ;WANG Yong-zhen1 ;ZHAO Hai-feng1 ;TIAN Yuan1 ;JIN Chang-chun1 ;JIN Yi-xin1
1 Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021
2 National Laboratory for Superhard Materials, Jilin University, Changchun 130023
3 Department of Physics, Tsinghua University, Beijing 100084
关键词 :
79.70.+q ,
81.15.Gh ,
73.40.Gk
Abstract : A stable electron emission was obtained at as low as about 2.5V/μm from acid treated diamond films. The emission data were fitted with Folwer-Nordheim theory. It is found that the non-electrons are emitted from some protrusions on surface of diamond films, and that after acid treatment, the effective work function is lowered, and the emission area is increased to two folds of those of as-grown films. These results were discussed.
Key words :
79.70.+q
81.15.Gh
73.40.Gk
出版日期: 1999-10-01
:
79.70.+q
(Field emission, ionization, evaporation, and desorption)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
73.40.Gk
(Tunneling)
引用本文:
YUAN Guang;JI Hong;HAN Li;WANG Xiu-feng;GU Chang-zhi;ZHANG Bao-lin;JIANG Hong;WANG Yong-zhen;ZHAO Hai-feng;TIAN Yuan;JIN Chang-chun;JIN Yi-xin
. Field Emission from Acid Treated Diamond Films[J]. 中国物理快报, 1999, 16(10): 773-774.
YUAN Guang, JI Hong, HAN Li, WANG Xiu-feng, GU Chang-zhi, ZHANG Bao-lin, JIANG Hong, WANG Yong-zhen, ZHAO Hai-feng, TIAN Yuan, JIN Chang-chun, JIN Yi-xin
. Field Emission from Acid Treated Diamond Films. Chin. Phys. Lett., 1999, 16(10): 773-774.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I10/773
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