Possible Room-Temperature Ferromagnetic Semiconductors
Jing-Yang You1*, Xue-Juan Dong2, Bo Gu3*, and Gang Su3*
1Department of Physics, Faculty of Science, National University of Singapore, 117551, Singapore 2Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 3Kavli Institute for Theoretical Sciences, and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
Abstract：Magnetic semiconductors integrate the dual characteristics of magnets and semiconductors. It is difficult to manufacture magnetic semiconductors that function at room temperature. Here, we review a series of our recent theoretical predictions on room-temperature ferromagnetic semiconductors. Since the creation of two-dimensional (2D) magnetic semiconductors in 2017, there have been numerous developments in both experimental and theoretical investigations. By density functional theory calculations and model analysis, we recently predicted several 2D room-temperature magnetic semiconductors, including CrGeSe$_3$ with strain, CrGeTe$_3$/PtSe$_2$ heterostructure, and technetium-based semiconductors (TcSiTe$_3$, TcGeSe$_3$, and TcGeTe$_3$), as well as PdBr$_3$ and PtBr$_3$ with a potential room-temperature quantum anomalous Hall effect. Our findings demonstrated that the Curie temperature of these 2D ferromagnetic semiconductors can be dramatically enhanced by some external fields, such as strain, construction of heterostructure, and electric field. In addition, we proposed appropriate doping conditions for diluted magnetic semiconductors, and predicted the Cr doped GaSb and InSb as possible room-temperature magnetic semiconductors.
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2023, Vol. 40 
