中国物理快报  2023, Vol. 40 Issue (6): 67301-    DOI: 10.1088/0256-307X/40/6/067301
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Gate-Tunable Negative Differential Conductance in Hybrid Semiconductor–Superconductor Devices
Ming-Li Liu1,2†, Dong Pan3†, Tian Le1, Jiang-Bo He1, Zhong-Mou Jia1,2, Shang Zhu1,2, Guang Yang1, Zhao-Zheng Lyu1, Guang-Tong Liu1,4, Jie Shen1,4, Jian-Hua Zhao3*, Li Lu1,2,4*, and Fan-Ming Qu1,2,4*
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
3State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
4Songshan Lake Materials Laboratory, Dongguan 523808, China