Intrinsic Electronic Properties of BN-Encapsulated, van der Waals Contacted MoSe$_{2}$ Field-Effect Transistors
Yinjiang Shao1, Jian Zhou1, Ning Xu1, Jian Chen1, Kenji Watanabe2, Takashi Taniguchi2, Yi Shi1, and Songlin Li1*
1School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China 2National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Abstract：Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe$_{2}$ field-effect transistors (FETs) that are fully encapsulated in ultraclean hexagonal boron nitride dielectrics and are simultaneously van der Waals contacted with gold electrodes. The FETs exhibit electronically favorable channel/dielectric interfaces with low densities of interfacial traps ($ < $ $10^{10}$ cm$^{-2}$), which lead to outstanding device characteristics at room temperature, including near-Boltzmann-limit subthreshold swings (65 mV/dec), high carrier mobilities (53–68 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$), and negligible scanning hystereses ($ < $ $15$ mV). The dependence of various contact-related parameters with temperature and carrier density is also systematically characterized to understand the van der Waals contacts between gold and MoSe$_{2}$. The results provide insightful information about the device physics in van der Waals contacted and encapsulated 2D FETs.
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