1State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China 2Beijing Academy of Quantum Information Sciences, Beijing 100193, China 3State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 4Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 5School of Integrated Circuits and Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China 6Yangtze Delta Region Industrial Innovation Center of Quantum and Information, Suzhou 215133, China 7Frontier Science Center for Quantum Information, Beijing 100084, China
Abstract:We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time $T_1\sim0.56$ µs and the dephasing time $T_2^* \sim0.38$ µs. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.
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