Analytic S-Shaped Temperature Dependence of Peak Positions of the Localized-State Ensemble Luminescence and Application in the Analysis of Luminescence in Non- and Semi-Polar InGaN/GaN Quantum-Wells Micro-Array
Xiaorui Wang1 and Shijie Xu1,2*
1Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China 2Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200438, China
Abstract：Two analytic expressions of temperature-dependent peak positions employing the localized-state ensemble (LSE) luminescence model are deduced for the cases of ${\Delta E=E_{\rm a}-E}_{0} >0$ and $ < 0$, respectively, under the first-order approximation of Taylor's expansion. Then, the deduced formulas are applied to examine the experimental variable-temperature photoluminescence data of non- and semi-polar InGaN/GaN quantum-wells (QWs) array by jointly considering the monotonic bandgap shrinking described by Pässler's empirical formula. S-shaped temperature dependence of luminescence peaks of both non- and semi-polar QWs is well reproduced with the analytic formulas. As a result, the localization depths are found to be 31.5 and 32.2 meV, respectively, for non- and semi-polar QWs.
. [J]. 中国物理快报, 2022, 39(10): 107801-.
Xiaorui Wang and Shijie Xu. Analytic S-Shaped Temperature Dependence of Peak Positions of the Localized-State Ensemble Luminescence and Application in the Analysis of Luminescence in Non- and Semi-Polar InGaN/GaN Quantum-Wells Micro-Array. Chin. Phys. Lett., 2022, 39(10): 107801-.
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