1State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China 2Shanghai Qi Zhi Institute, Shanghai 200232, China 3Department of Physics, Fudan University, Shanghai 200433, China 4Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China 5Shanghai Research Center for Quantum Sciences, Shanghai 201315, China 6Fert Beijing Institute, BDBC, School of Electronic and Information Engineering, Beihang University, Beijing 100191, China 7Department of Physics and Astronomy, University of California, Irvine, California 92697, USA 8Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
Abstract：We report a significantly enhanced anomalous Hall effect (AHE) of Pt on antiferromagnetic insulator thin film (3-unit-cell La$_{0.7}$Sr$_{0.3}$MnO$_{3}$, abbreviated as LSMO), which is one order of magnitude larger than that of Pt on other ferromagnetic (e.g. Y$_{3}$Fe$_{5}$O$_{12}$) and antiferromagnetic (e.g. Cr$_{2}$O$_{3}$) insulator thin films. Our experiments demonstrate that the antiferromagnetic La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ with fully compensated surface suppresses the positive anomalous Hall resistivity induced by the magnetic proximity effect and facilitates the negative anomalous Hall resistivity induced by the spin Hall effect. By changing the substrate's temperature during Pt deposition, we observed that the diffusion of Mn atoms into Pt layer can further enhance the AHE. The anomalous Hall resistivity increases with increasing temperature and persists even well above the Neel temperature ($T_{\rm N}$) of LSMO. The Monte Carlo simulations manifest that the unusual rise of anomalous Hall resistivity above $T_{\rm N}$ originates from the thermal induced magnetization in the antiferromagnetic insulator.
Nakayama H, Althammer M, Chen Y T, Uchida K, Kajiwara Y, Kikuchi D, Ohtani T, Geprägs S, Opel M, Takahashi S, Gross R, Bauer G E W, Goennenwein S T B, and Saitoh E 2013 Phys. Rev. Lett.110 206601
Ding S L, Liang Z Y, Yun C, Wu R, Xue M Z, Lin Z C, Ross A, Becker S, Yang W Y, Ma X B, Chen D F, Sun K, Jakob G, Kläui M, and Yang J B 2021 Phys. Rev. B104 224410
Chen H Y, Yu Y, Wang Z, Bai Y, Lin H X, Li X L, Liu H, Miao T, Kou Y F, Zhang Y S, Li Y, Tang J, Wang Z C, Cai P, Zhu Y Y, Cheng Z H, Zhong X Y, Wang W B, Gao X Y, Yin L F, Wu R Q, and Shen J 2019 Phys. Rev. B99 214419
Tebano A, Aruta C, Sanna S, Medaglia P G, Balestrino G, Sidorenko A A, De Renzi R, Ghiringhelli G, Braicovich L, Bisogni V, and Brookes N B 2008 Phys. Rev. Lett.100 137401
Ahmed A S, Lee A J, Bagués N, McCullian B A, Thabt A M A, Perrine A, Wu P, Rowland J R, Randeria M, Hammel P C, McComb D W, and Yang F Y 2019 Nano Lett.19 5683
2022, Vol. 39 
